DMG3415UFY4Q-7 DIODES INCORPORATED MOSFET P-CH 16V 2.5A X2-DFN2015 P-Channel 16V 2.5A (Ta) 650mW (Ta) Surface Mount X2-DFN2015-3
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| Producent | DIODES INCORPORATED | | Part Number | DMG3415UFY4Q-7 (DMG3415UFY4Q7) |
| Specifications | MOSFET P-CH 16V 2.5A X2-DFN2015 P-Channel 16V 2.5A (Ta) 650mW (Ta) Surface Mount X2-DFN2015-3 |
| Unit Price | 0,15 EUR |
| Minimum Order Quantity | 3 |
| Tariff No. | |
| Lead Time | 42 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 282pF @ 10V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 650mW (Ta) Rds On (Max) @ Id, Vgs 39 mOhm @ 4A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X2-DFN2015-3 Package / Case 3-XFDFN |
| Datasheets | |
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