DMP56D0UFB-7B DIODES INCORPORATED MOSFET P-CH 50V 200MA 3DFN P-Channel 50V 200mA (Ta) 425mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6)
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Producent | DIODES INCORPORATED | Part Number | DMP56D0UFB-7B (DMP56D0UFB7B) |
Specifications | MOSFET P-CH 50V 200MA 3DFN P-Channel 50V 200mA (Ta) 425mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6) |
Unit Price | 0,10 EUR |
Minimum Order Quantity | 10 |
Tariff No. | |
Lead Time | 42 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.58nC @ 4V Input Capacitance (Ciss) (Max) @ Vds 50.54pF @ 25V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 425mW (Ta) Rds On (Max) @ Id, Vgs 6 Ohm @ 100mA, 4V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-DFN1006 (1.0x0.6) Package / Case 3-UFDFN |
Datasheets | |
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