DIM100PHM33-F Dynex Dynex, DIM100PHM33-F, IGBT Transistor Module, N-channel, Dual, 100 A max, 3300 V, 8-Pin Type P
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| Producent | Dynex | | Part Number | DIM100PHM33-F (DIM100PHM33F) |
| Specifications | Dynex, DIM100PHM33-F, IGBT Transistor Module, N-channel, Dual, 100 A max, 3300 V, 8-Pin Type P |
| Unit Price | 1084,91 EUR |
| Minimum Order Quantity | 1 |
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| Description | Channel TypeN ConfigurationDual Dimensions140 x 73 x 38mm Height38mm Length140mm Maximum Collector Emitter Voltage3300 V Maximum Continuous Collector Current100 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation1.3 kW Mounting TypeScrew Package TypeType P Pin Count8 Width73mm Product Details IGBT Modules, Dynex IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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