EPC2016 EPC TRANS GAN 100V 11A BUMPED DIE N-Channel 100V 11A (Ta) Surface Mount Die
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| Producent | EPC | | Part Number | EPC2016 (EPC2016) |
| Specifications | TRANS GAN 100V 11A BUMPED DIE N-Channel 100V 11A (Ta) Surface Mount Die |
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| Minimum Order Quantity | 1 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer EPC Series eGaN® Packaging Cut Tape (CT) Part Status Discontinued at Digi-Key FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Vgs(th) (Max) @ Id 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 520pF @ 50V FET Feature - Power Dissipation (Max) - Rds On (Max) @ Id, Vgs 16 mOhm @ 11A, 5V Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |
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