EPC8010ENGR EPC TRANS GAN 100V 2.7A BUMPED DIE N-Channel 100V 2.7A (Ta) Surface Mount Die
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| Producent | EPC | | Part Number | EPC8010ENGR (EPC8010ENGR) |
| Specifications | TRANS GAN 100V 2.7A BUMPED DIE N-Channel 100V 2.7A (Ta) Surface Mount Die |
| Unit Price | 16,13 EUR |
| Minimum Order Quantity | 10 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer EPC Series eGaN® Packaging Tray Part Status Active FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 55pF @ 50V FET Feature - Power Dissipation (Max) - Rds On (Max) @ Id, Vgs 160 mOhm @ 500mA, 5V Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case - |
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