EPC2110ENGRT EPC TRANS GAN 2N-CH 120V BUMPED DIE Mosfet Array 2 N-Channel (Dual) Common Drain 120V 3.4A Surface Mount Die
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| Producent | EPC | | Part Number | EPC2110ENGRT (EPC2110ENGRT) |
| Specifications | TRANS GAN 2N-CH 120V BUMPED DIE Mosfet Array 2 N-Channel (Dual) Common Drain 120V 3.4A Surface Mount Die |
| Unit Price | 0,96 EUR |
| Minimum Order Quantity | 2.5 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays Manufacturer EPC Series eGaN® Packaging Tape & Reel (TR) Part Status Active FET Type 2 N-Channel (Dual) Common Drain FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 3.4A Rds On (Max) @ Id, Vgs 60 mOhm @ 4A, 5V Vgs(th) (Max) @ Id 2.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
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