FQB19N20LTM Fairchild/ON Semiconductor MOSFET N-CH 200V 21A D2PAK N-Channel 200V 21A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263AB)

ProducentFairchild/ON Semiconductor
Part Number

FQB19N20LTM (FQB19N20LTM)

Specifications

MOSFET N-CH 200V 21A D2PAK N-Channel 200V 21A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263AB)

Unit Price0,74 EUR
Minimum Order Quantity800
Tariff No.
Lead Time42 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Fairchild/ON Semiconductor Series QFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 3.13W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs 140 mOhm @ 10.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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