FQU1N60CTU Fairchild/ON Semiconductor MOSFET N-CH 600V 1A IPAK N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-Pak

ProducentFairchild/ON Semiconductor
Part Number

FQU1N60CTU (FQU1N60CTU)

Specifications

MOSFET N-CH 600V 1A IPAK N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-Pak

Unit Price0,61 EUR
Minimum Order Quantity70
Tariff No.
Lead Time42 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Fairchild/ON Semiconductor Series QFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs 11.5 Ohm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-Pak Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Datasheets
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