FCP190N60E Fairchild/ON Semiconductor MOSFET N-CH 600V TO220-3 N-Channel 600V 20.6A (Tc) 208W (Tc) Through Hole TO-220

ProducentFairchild/ON Semiconductor
Part Number

FCP190N60E (FCP190N60E)

Specifications

MOSFET N-CH 600V TO220-3 N-Channel 600V 20.6A (Tc) 208W (Tc) Through Hole TO-220

Unit Price3,42 EUR
Minimum Order Quantity50
Tariff No.
Lead Time42 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Fairchild/ON Semiconductor Series SuperFET® II Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20.6A (Tc) Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3175pF @ 25V FET Feature - Power Dissipation (Max) 208W (Tc) Rds On (Max) @ Id, Vgs 190 mOhm @ 10A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3
Datasheets
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