FCP190N65F Fairchild/ON Semiconductor MOSFET N-CH 650V 20.6A TO220-3 N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3
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| Producent | Fairchild/ON Semiconductor | | Part Number | FCP190N65F (FCP190N65F) |
| Specifications | MOSFET N-CH 650V 20.6A TO220-3 N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3 |
| Unit Price | 3,41 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 70 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Fairchild/ON Semiconductor Series FRFET®, SuperFET® II Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 2mA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3225pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 208W (Tc) Rds On (Max) @ Id, Vgs 190 mOhm @ 10A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
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