FQD2N80TM Fairchild/ON Semiconductor MOSFET N-CH 800V 1.8A DPAK N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak

ProducentFairchild/ON Semiconductor
Part Number

FQD2N80TM (FQD2N80TM)

Specifications

MOSFET N-CH 800V 1.8A DPAK N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak

Unit Price0,81 EUR
Minimum Order Quantity1
Tariff No.
Lead Time42 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Fairchild/ON Semiconductor Series QFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs 6.3 Ohm @ 900mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
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