FCP650N80Z Fairchild/ON Semiconductor MOSFET N-CH 800V 10A N-Channel 800V 10A (Tc) 162W (Tc) Through Hole TO-220
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| Producent | Fairchild/ON Semiconductor | | Part Number | FCP650N80Z (FCP650N80Z) |
| Specifications | MOSFET N-CH 800V 10A N-Channel 800V 10A (Tc) 162W (Tc) Through Hole TO-220 |
| Unit Price | 3,37 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 56 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Fairchild/ON Semiconductor Series SuperFET® II Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 800µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1565pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 162W (Tc) Rds On (Max) @ Id, Vgs 650 mOhm @ 4A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
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