FQB4N80TM Fairchild/ON Semiconductor MOSFET N-CH 800V 3.9A D2PAK N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263AB)
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| Producent | Fairchild/ON Semiconductor | | Part Number | FQB4N80TM (FQB4N80TM) |
| Specifications | MOSFET N-CH 800V 3.9A D2PAK N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263AB) |
| Unit Price | 0,86 EUR |
| Minimum Order Quantity | 800 |
| Tariff No. | |
| Lead Time | 42 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Fairchild/ON Semiconductor Series QFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 3.13W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs 3.6 Ohm @ 1.95A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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