FDD3510H Fairchild/ON Semiconductor MOSFET N/P-CH 80V 4.3A/2.8A DPAK Mosfet Array N and P-Channel, Common Drain 80V 4.3A, 2.8A 1.3W Surface Mount TO-252-4L

ProducentFairchild/ON Semiconductor
Part Number

FDD3510H (FDD3510H)

Specifications

MOSFET N/P-CH 80V 4.3A/2.8A DPAK Mosfet Array N and P-Channel, Common Drain 80V 4.3A, 2.8A 1.3W Surface Mount TO-252-4L

Unit Price0,78 EUR
Minimum Order Quantity1
Tariff No.
Lead Time119 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays Manufacturer Fairchild/ON Semiconductor Series PowerTrench® Packaging Cut Tape (CT) Part Status Active FET Type N and P-Channel, Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 4.3A, 2.8A Rds On (Max) @ Id, Vgs 80 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 40V Power - Max 1.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package TO-252-4L
Datasheets
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