FQB34P10TM Fairchild/ON Semiconductor MOSFET P-CH 100V 33.5A D2PAK P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB)

ProducentFairchild/ON Semiconductor
Part Number

FQB34P10TM (FQB34P10TM)

Specifications

MOSFET P-CH 100V 33.5A D2PAK P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB)

Unit Price2,16 EUR
Minimum Order Quantity1
Tariff No.
Lead Time42 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Fairchild/ON Semiconductor Series QFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 33.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2910pF @ 25V Vgs (Max) ±25V FET Feature - Power Dissipation (Max) 3.75W (Ta), 155W (Tc) Rds On (Max) @ Id, Vgs 60 mOhm @ 16.75A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheets
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