2N6517BU FAIRCHILD SEMICONDUCTOR Bipolar Transistors - BJT NPN Si Transistor Epitaxial
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| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | 2N6517BU (2N6517BU) |
| Specifications | Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
| Unit Price | 0,38 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 6 weeks |
| Weight and Dimension | |
| Description | Fairchild Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 350 V Collector- Emitter Voltage VCEO Max: 350 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 200 MHz Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-92 Brand: Fairchild Semiconductor DC Collector/Base Gain hFE Min: 30 DC Current Gain hFE Max: 200 Maximum Power Dissipation: 625 mW Minimum Operating Temperature: - 55 C Packaging: Bulk Series: 2N6517 Factory Pack Quantity: 1000 Part # Aliases: 2N6517BU_NL |
| Datasheets | |
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