KSB834WYTM FAIRCHILD SEMICONDUCTOR Bipolar Transistors - BJT PNP Epitaxial Sil
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| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | KSB834WYTM (KSB834WYTM) |
| Specifications | Bipolar Transistors - BJT PNP Epitaxial Sil |
| Unit Price | 0,82 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | |
| Weight and Dimension | 0.0013 Kg |
| Description | Fairchild Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: - 60 V Collector- Emitter Voltage VCEO Max: - 60 V Emitter- Base Voltage VEBO: - 7 V Collector-Emitter Saturation Voltage: - 0.5 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 9 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: TO-263 Brand: Fairchild Semiconductor DC Collector/Base Gain hFE Min: 60 DC Current Gain hFE Max: 200 Maximum Power Dissipation: 30 W Minimum Operating Temperature: - 55 C Packaging: Reel Series: KSB834 Factory Pack Quantity: 800 |
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