FCB20N60_F085 FAIRCHILD SEMICONDUCTOR Fairchild FCB20N60_F085 N-channel MOSFET Transistor, 3-pin TO-263AB

ProducentFAIRCHILD SEMICONDUCTOR
Part Number

FCB20N60_F085 (FCB20N60F085)

Specifications

Fairchild FCB20N60_F085 N-channel MOSFET Transistor, 3-pin TO-263AB

Unit Price3,57 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionCategorySuperFET MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10.67 x 4.83 x 11.33mm Height11.33mm Length10.67mm Maximum Continuous Drain Current20 A Maximum Drain Source Resistance198 mΩ Maximum Drain Source Voltage600 V Maximum Gate Source Voltage±30 V Maximum Operating Temperature+150 °C Maximum Power Dissipation341 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeTO-263AB Pin Count3 Typical Gate Charge @ Vgs102 nC@ 10 V Typical Input Capacitance @ Vds2710 pF@ 25 V Typical Turn-Off Delay Time208 ns Typical Turn-On Delay Time44 ns Width4.83mm Product Details SuperFET® and SuperFET® II MOSFET, Fairchild Semiconductor Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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