FDB38N30U FAIRCHILD SEMICONDUCTOR Fairchild FDB38N30U N-channel MOSFET Transistor, 38 A, 300 V, 3-pin D2PAK
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| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | FDB38N30U (FDB38N30U) |
| Specifications | Fairchild FDB38N30U N-channel MOSFET Transistor, 38 A, 300 V, 3-pin D2PAK |
| Unit Price | 3,15 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | CategoryUninterrupted Power Supply Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10.67 x 9.65 x 4.83mm Height4.83mm Length10.67mm Maximum Continuous Drain Current38 A Maximum Drain Source Resistance0.12 Ω Maximum Drain Source Voltage300 V Maximum Gate Source Voltage±30 V Maximum Operating Temperature+150 °C Maximum Power Dissipation313 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeD2PAK Pin Count3 Typical Gate Charge @ Vgs56 nC@ 10 V Typical Input Capacitance @ Vds2510 pF@ 25 V Typical Turn-Off Delay Time133 ns Typical Turn-On Delay Time33 ns Width9.65mm Product Details UniFET™ MOSFET, Fairchild Semiconductor UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer. |
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