FGA30N120FTDTU FAIRCHILD SEMICONDUCTOR Fairchild FGA30N120FTDTU N-channel IGBT Transistor, 60 A 1200 V, 3-Pin TO-3PN
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| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | FGA30N120FTDTU (FGA30N120FTDTU) |
| Specifications | Fairchild FGA30N120FTDTU N-channel IGBT Transistor, 60 A 1200 V, 3-Pin TO-3PN |
| Unit Price | 4,88 EUR |
| Minimum Order Quantity | 1 |
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| Description | Channel TypeN ConfigurationSingle Dimensions15.8 x 5 x 20.1mm Height20.1mm Length15.8mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current60 A Maximum Gate Emitter Voltage±25V Maximum Operating Temperature+150 °C Maximum Power Dissipation339 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-3PN Pin Count3 Width5mm Product Details IGBT Discretes, Fairchild Semiconductor IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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