FGB5N60UNDF FAIRCHILD SEMICONDUCTOR Fairchild FGB5N60UNDF N-channel IGBT Transistor, 10 A 600 V, 2 +Tab-Pin D2PAK
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| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | FGB5N60UNDF (FGB5N60UNDF) |
| Specifications | Fairchild FGB5N60UNDF N-channel IGBT Transistor, 10 A 600 V, 2 +Tab-Pin D2PAK |
| Unit Price | 1,58 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Channel TypeN ConfigurationSingle Dimensions10.67 x 9.65 x 4.83mm Height4.83mm Length10.67mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current10 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation73.5 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Package TypeD2PAK Pin Count2 +Tab Width9.65mm Product Details IGBT Discretes, Fairchild Semiconductor IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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