FGH25T120SMD_F155 FAIRCHILD SEMICONDUCTOR Fairchild FGH25T120SMD_F155 N-channel IGBT Transistor, 50 A 1200 V, 3-Pin TO-247
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| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | FGH25T120SMD_F155 (FGH25T120SMDF155) |
| Specifications | Fairchild FGH25T120SMD_F155 N-channel IGBT Transistor, 50 A 1200 V, 3-Pin TO-247 |
| Unit Price | 5,40 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Channel TypeN ConfigurationSingle Dimensions15.87 x 4.82 x 20.82mm Height20.82mm Length15.87mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current50 A Maximum Gate Emitter Voltage±25V Maximum Operating Temperature+175 °C Maximum Power Dissipation428 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-247 Pin Count3 Width4.82mm Product Details IGBT Discretes, Fairchild Semiconductor IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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