FGH75T65UPD FAIRCHILD SEMICONDUCTOR Fairchild FGH75T65UPD IGBT Transistor, 75 A 650 V, 1MHz, 3-Pin TO-247AB
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| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | FGH75T65UPD (FGH75T65UPD) |
| Specifications | Fairchild FGH75T65UPD IGBT Transistor, 75 A 650 V, 1MHz, 3-Pin TO-247AB |
| Unit Price | 6,00 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | ConfigurationSingle Dimensions15.87 x 4.82 x 20.82mm Height20.82mm Length15.87mm Maximum Collector Emitter Voltage650 V Maximum Continuous Collector Current75 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+175 °C Maximum Power Dissipation375 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-247AB Pin Count3 Switching Speed1MHz Width4.82mm Product Details IGBT Discretes, Fairchild Semiconductor IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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