FQA65N20 FAIRCHILD SEMICONDUCTOR Fairchild FQA65N20 N-channel MOSFET Transistor, 65 A, 200 V, 3-pin TO-3PN

ProducentFAIRCHILD SEMICONDUCTOR
Part Number

FQA65N20 (FQA65N20)

Specifications

Fairchild FQA65N20 N-channel MOSFET Transistor, 65 A, 200 V, 3-pin TO-3PN

Unit Price2,77 EUR
Minimum Order Quantity1
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Weight and Dimension
DescriptionCategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions15.8 x 5 x 18.9mm Height18.9mm Length15.8mm Maximum Continuous Drain Current65 A Maximum Drain Source Resistance0.032 Ω Maximum Drain Source Voltage200 V Maximum Gate Source Voltage±30 V Maximum Operating Temperature+150 °C Maximum Power Dissipation310 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Number of Elements per Chip1 Package TypeTO-3PN Pin Count3 Typical Gate Charge @ Vgs170 nC V @ 10 Typical Input Capacitance @ Vds6600 pF V @ 25 Typical Turn-Off Delay Time340 ns Typical Turn-On Delay Time120 ns Width5mm Product Details QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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