FJBE2150DTU FAIRCHILD SEMICONDUCTOR Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
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| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | FJBE2150DTU (FJBE2150DTU) |
| Specifications | Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor |
| Unit Price | 1,61 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 6 weeks |
| Weight and Dimension | 0.0019 Kg |
| Description | Fairchild Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 1.25 kV Collector- Emitter Voltage VCEO Max: 800 V Emitter- Base Voltage VEBO: 12 V Collector-Emitter Saturation Voltage: 0.25 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 5 MHz Maximum Operating Temperature: + 125 C Mounting Style: SMD/SMT Package/Case: D2PAK-2 Brand: Fairchild Semiconductor DC Collector/Base Gain hFE Min: 20 DC Current Gain hFE Max: 35 Maximum Power Dissipation: 110 W Minimum Operating Temperature: - 55 C Packaging: Tube Series: FJBE2150D Factory Pack Quantity: 50 |
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