HGT1S10N120BNST FAIRCHILD SEMICONDUCTOR IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3
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| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | HGT1S10N120BNST (HGT1S10N120BNST) |
| Specifications | IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3 |
| Unit Price | 21,24 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | 85412900 |
| Lead Time | 8 weeks |
| Weight and Dimension | |
| Description | Collector Emitter Saturation Voltage Vce(on): 2.45V Collector Emitter Voltage V(br)ceo: 1.2kV DC Collector Current: 35A MSL: MSL 1 - Unlimited No. of Pins: 3 Operating Temperature Max: 150°C Power Dissipation Pd: 298W SVHC: No SVHC (16-Jun-2014) Transistor Case Style: TO-263AB FAIRCHILD SEMICONDUCTOR-HGT1S10N120BNST-IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3;IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-263AB; No. of Pins:3; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited |
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