FGAF40N60SMD FAIRCHILD SEMICONDUCTOR Fairchild FGAF40N60SMD N-channel IGBT Transistor, 80 A 600 V, 1MHz, 3-Pin TO-3PF
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| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | FGAF40N60SMD (FGAF40N60SMD) |
| Specifications | Fairchild FGAF40N60SMD N-channel IGBT Transistor, 80 A 600 V, 1MHz, 3-Pin TO-3PF |
| Unit Price | 4,86 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Channel TypeN ConfigurationSingle Dimensions15.7 x 3.2 x 26.7mm Height26.7mm Length15.7mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current80 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+175 °C Maximum Power Dissipation115 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-3PF Pin Count3 Switching Speed1MHz Width3.2mm Product Details IGBT Discretes, Fairchild Semiconductor IGBT Discretes & Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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