FGH75T65UPD_F085 FAIRCHILD SEMICONDUCTOR Fairchild FGH75T65UPD_F085 N-channel IGBT Transistor, 150 A 650 V, 3-Pin TO-247

ProducentFAIRCHILD SEMICONDUCTOR
Part Number

FGH75T65UPD_F085 (FGH75T65UPDF085)

Specifications

Fairchild FGH75T65UPD_F085 N-channel IGBT Transistor, 150 A 650 V, 3-Pin TO-247

Unit Price6,85 EUR
Minimum Order Quantity1
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Weight and Dimension
DescriptionChannel TypeN ConfigurationSingle Dimensions15.6 x 4.7 x 20.6mm Height20.6mm Length15.6mm Maximum Collector Emitter Voltage650 V Maximum Continuous Collector Current150 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+175 °C Maximum Power Dissipation375 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-247 Pin Count3 Width4.7mm Product Details IGBT Discretes, Fairchild Semiconductor IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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