HUFA76645S3ST_F085 FAIRCHILD SEMICONDUCTOR Fairchild HUFA76645S3ST_F085 N-channel MOSFET Transistor, 75 A, 100 V, 3-pin TO-263AB
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| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | HUFA76645S3ST_F085 (HUFA76645S3STF085) |
| Specifications | Fairchild HUFA76645S3ST_F085 N-channel MOSFET Transistor, 75 A, 100 V, 3-pin TO-263AB |
| Unit Price | 1,96 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10.67 x 9.65 x 4.83mm Height4.83mm Length10.67mm Maximum Continuous Drain Current75 A Maximum Drain Source Resistance0.014 Ω Maximum Drain Source Voltage100 V Maximum Gate Source Voltage±16 V Maximum Operating Temperature+175 °C Maximum Power Dissipation310 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeTO-263AB Pin Count3 Typical Gate Charge @ Vgs127 nC@ 10 V Typical Input Capacitance @ Vds4400 pF@ 25 V Typical Turn-Off Delay Time69 ns Typical Turn-On Delay Time11 ns Width9.65mm Product Details UltraFET® MOSFET, Fairchild Semiconductor UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer. |
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