FDB120N10 FAIRCHILD SEMICONDUCTOR MOSFET 100V N-Chan 12Mohm PowerTrench

ProducentFAIRCHILD SEMICONDUCTOR
Part Number

FDB120N10 (FDB120N10)

Specifications

MOSFET 100V N-Chan 12Mohm PowerTrench

Unit Price2,76 EUR
Minimum Order Quantity1
Tariff No.
Lead Time6 weeks
Weight and Dimension0.0013 Kg
DescriptionFairchild Semiconductor Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 74 A Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 9.7 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 170 W Mounting Style: SMD/SMT Package/Case: D2PAK-3 Packaging: Reel Brand: Fairchild Semiconductor Channel Mode: Enhancement Configuration: Single Fall Time: 15 ns Forward Transconductance - Min: 105 S Minimum Operating Temperature: - 55 C Rise Time: 105 ns Series: FDB120N10 Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 39 ns
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