FDD18N20LZ FAIRCHILD SEMICONDUCTOR Fairchild FDD18N20LZ N-channel MOSFET Transistor, 16 A, 200 V, 2+1 (Tab)-pin DPAK
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| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | FDD18N20LZ (FDD18N20LZ) |
| Specifications | Fairchild FDD18N20LZ N-channel MOSFET Transistor, 16 A, 200 V, 2+1 (Tab)-pin DPAK |
| Unit Price | 0,89 EUR |
| Minimum Order Quantity | 1 |
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| Description | CategoryUniFET MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions6.73 x 6.22 x 2.39mm Height2.39mm Length6.73mm Maximum Continuous Drain Current16 A Maximum Drain Source Resistance0.13 Ω Maximum Drain Source Voltage200 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+150 °C Maximum Power Dissipation89 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeDPAK Pin Count2+1 (Tab) Typical Gate Charge @ Vgs30 nC@ 10 V Typical Input Capacitance @ Vds1185 pF@ 25 V Typical Turn-Off Delay Time135 ns Typical Turn-On Delay Time15 ns Width6.22mm Product Details UniFET™ MOSFET, Fairchild Semiconductor UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer. |
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