FQI4N80TU FAIRCHILD SEMICONDUCTOR MOSFET 800V N-Channel QFET
| |
|
| Producent | FAIRCHILD SEMICONDUCTOR | | Part Number | FQI4N80TU (FQI4N80TU) |
| Specifications | MOSFET 800V N-Channel QFET |
| Unit Price | 1,83 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 6 weeks |
| Weight and Dimension | 0.0021 Kg |
| Description | Fairchild Semiconductor Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 3.9 A Vds - Drain-Source Breakdown Voltage: 800 V Rds On - Drain-Source Resistance: 2.8 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 30 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.13 W Mounting Style: Through Hole Package/Case: I2PAK-3 Packaging: Tube Brand: Fairchild Semiconductor Channel Mode: Enhancement Configuration: Single Fall Time: 35 ns Forward Transconductance - Min: 3.8 S Minimum Operating Temperature: - 55 C Rise Time: 45 ns Series: FQI4N80 Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 35 ns |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
