1MBI1200UE-330 Fuji Fuji, 1MBI1200UE-330, IGBT Transistor Module, 1200 A max, 3300 V, 6-Pin M152
| |
|
| Producent | Fuji | | Part Number | 1MBI1200UE-330 (1MBI1200UE330) |
| Specifications | Fuji, 1MBI1200UE-330, IGBT Transistor Module, 1200 A max, 3300 V, 6-Pin M152 |
| Unit Price | 1256,77 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | |
| Weight and Dimension | |
| Description | Dimensions190 x 140 x 38mm Height38mm Length190mm Maximum Collector Emitter Voltage3300 V Maximum Continuous Collector Current1200 A Maximum Gate Emitter Voltage±20V Maximum Power Dissipation14700 W Mounting TypeScrew Package TypeM152 Pin Count6 Width140mm Product Details IGBT Modules 1-Pack, Fuji Electric V-Series, 6th Generation Field-StopU/U4 Series, 5th Generation Field-StopHH Series, Planar-NPT High-Speed Chooper IGBTs IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
