1MBI3600U4D-170 Fuji Fuji, 1MBI3600U4D-170, IGBT Transistor Module, N-channel, 3600 A max, 1700 V, 6-Pin M152
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| Producent | Fuji | | Part Number | 1MBI3600U4D-170 (1MBI3600U4D170) |
| Specifications | Fuji, 1MBI3600U4D-170, IGBT Transistor Module, N-channel, 3600 A max, 1700 V, 6-Pin M152 |
| Unit Price | 1607,54 EUR |
| Minimum Order Quantity | 1 |
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| Description | Channel TypeN ConfigurationSingle Dimensions190 x 140 x 38mm Height38mm Length190mm Maximum Collector Emitter Voltage1700 V Maximum Continuous Collector Current3600 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation4960 W Mounting TypeScrew Package TypeM152 Pin Count6 Width140mm Product Details IGBT Modules 1-Pack, Fuji Electric V-Series, 6th Generation Field-StopU/U4 Series, 5th Generation Field-StopHH Series, Planar-NPT High-Speed Chooper IGBTs IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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