2MBi300U4H-120-50 Fuji Fuji, 2MBi300U4H-120-50, IGBT Module, N-channel, Dual, 300 A max, 1200 V, 7-Pin M249

ProducentFuji
Part Number

2MBi300U4H-120-50 (2MBI300U4H12050)

Specifications

Fuji, 2MBi300U4H-120-50, IGBT Module, N-channel, Dual, 300 A max, 1200 V, 7-Pin M249

Unit Price173,12 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionChannel TypeN ConfigurationDual, Emitter-Collector Dimensions108 x 62 x 30mm Height30mm Length108mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current300 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation1470 W Mounting TypeScrew Package TypeM249 Pin Count7 Width62mm Product Details IGBT Discretes, Fuji Electric IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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