2MBi300U4J-120-50 Fuji Fuji, 2MBi300U4J-120-50, IGBT Module, N-channel, Dual, 300 A max, 1200 V, 15-Pin M250

ProducentFuji
Part Number

2MBi300U4J-120-50 (2MBI300U4J12050)

Specifications

Fuji, 2MBi300U4J-120-50, IGBT Module, N-channel, Dual, 300 A max, 1200 V, 15-Pin M250

Unit Price176,03 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionChannel TypeN ConfigurationDual, Emitter-Collector Dimensions150 x 62 x 17mm Height17mm Length150mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current300 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation1385 W Mounting TypeScrew Package TypeM250 Pin Count15 Width62mm Product Details IGBT Discretes, Fuji Electric IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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