2MBi450VE-120-50 Fuji Fuji, 2MBi450VE-120-50, IGBT Module, N-channel, Dual, 520 A max, 1200 V, 7-Pin M277
| |
|
| Producent | Fuji | | Part Number | 2MBi450VE-120-50 (2MBI450VE12050) |
| Specifications | Fuji, 2MBi450VE-120-50, IGBT Module, N-channel, Dual, 520 A max, 1200 V, 7-Pin M277 |
| Unit Price | 173,03 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | |
| Weight and Dimension | |
| Description | Channel TypeN ConfigurationDual, Emitter-Collector Dimensions110 x 80 x 30mm Height30mm Length110mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current520 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation3350 W Mounting TypeScrew Mount Package TypeM277 Pin Count7 Width80mm Product Details IGBT Modules 2-Pack, Fuji Electric V-Series, 6th Generation Field-StopU/U4 Series, 5th Generation Field-StopS-Series, 4th Generation NPT IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
