6MBI100U4B-120-50 Fuji Fuji, 6MBI100U4B-120-50, IGBT Module, N-channel, Hex (3 x Dual), 100 A max, 1200 V, 35-Pin M633
| |
|
| Producent | Fuji | | Part Number | 6MBI100U4B-120-50 (6MBI100U4B12050) |
| Specifications | Fuji, 6MBI100U4B-120-50, IGBT Module, N-channel, Hex (3 x Dual), 100 A max, 1200 V, 35-Pin M633 |
| Unit Price | 205,76 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | |
| Weight and Dimension | |
| Description | Channel TypeN ConfigurationEmitter-Collector, Hex (3 x Dual) Dimensions122 x 62 x 17mm Height17mm Length122mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current100 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation520 W Mounting TypeScrew Package TypeM633 Pin Count35 Width62mm Product Details IGBT Modules 6-Pack, Fuji Electric V-Series, 6th Generation Field-StopU/U4 Series, 5th Generation Field-StopS-Series, 4th Generation NPT Note Maximum collector current (Ic) values are stated per transistor within the module. IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
