6MBi35S-120-50 Fuji Fuji, 6MBi35S-120-50, IGBT Module, N-channel, Hex (3 x Dual), 50 A max, 1200 V, 17-Pin M623
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| Producent | Fuji | | Part Number | 6MBi35S-120-50 (6MBI35S12050) |
| Specifications | Fuji, 6MBi35S-120-50, IGBT Module, N-channel, Hex (3 x Dual), 50 A max, 1200 V, 17-Pin M623 |
| Unit Price | 74,64 EUR |
| Minimum Order Quantity | 1 |
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| Description | Channel TypeN ConfigurationEmitter-Collector, Hex (3 x Dual) Dimensions107.5 x 45 x 17mm Height17mm Length107.5mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current50 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation240 W Mounting TypeScrew Package TypeM623 Pin Count17 Width45mm Product Details IGBT Discretes, Fuji Electric IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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