7MBR100U4B-120-50 Fuji Fuji, 7MBR100U4B-120-50, IGBT Module, N-channel, Seven, 100 A max, 1200 V, 24-Pin M712

ProducentFuji
Part Number

7MBR100U4B-120-50 (7MBR100U4B12050)

Specifications

Fuji, 7MBR100U4B-120-50, IGBT Module, N-channel, Seven, 100 A max, 1200 V, 24-Pin M712

Unit Price222,17 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionChannel TypeN ConfigurationSeven Dimensions122 x 62 x 17mm Height17mm Length122mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current100 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation390 W Mounting TypeScrew Package TypeM712 Pin Count24 Width62mm Product Details IGBT Discretes, Fuji Electric IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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