FGW30N60VD Fuji Fuji FGW30N60VD N-channel IGBT Transistor, 30 A 600 V, 3-Pin TO-247
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| Producent | Fuji | | Part Number | FGW30N60VD (FGW30N60VD) |
| Specifications | Fuji FGW30N60VD N-channel IGBT Transistor, 30 A 600 V, 3-Pin TO-247 |
| Unit Price | 9,36 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Channel TypeN ConfigurationSingle Dimensions15.9 x 5.03 x 20.95mm Height20.95mm Length15.9mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current30 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+175 °C Maximum Power Dissipation230 W Minimum Operating Temperature-40 °C Mounting TypeThrough Hole Package TypeTO-247 Pin Count3 Width5.03mm Product Details IGBT Discretes, Fuji Electric IGBT Discretes & Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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