GS66508P-E05-TY GaN Systems MOSFET 650V 30A E-Mode GaN Preproduction Units
| |
|
| Producent | GaN Systems | | Part Number | GS66508P-E05-TY (GS66508PE05TY) |
| Specifications | MOSFET 650V 30A E-Mode GaN Preproduction Units |
| Unit Price | |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | |
| Weight and Dimension | |
| Description | GaN Systems Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: 650 V Rds On - Drain-Source Resistance: 55 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 10 V Vgs th - Gate-Source Threshold Voltage: 1.6 V Qg - Gate Charge: 6.5 nC Mounting Style: SMD/SMT Packaging: Tray Brand: GaN Systems Channel Mode: Enhancement Ciss - Input Capacitance: 200 pF |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
