GS66508T-E01-TY GaN Systems MOSFET Top cooled 650V GaN Transistor
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| Producent | GaN Systems | | Part Number | GS66508T-E01-TY (GS66508TE01TY) |
| Specifications | MOSFET Top cooled 650V GaN Transistor |
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| Minimum Order Quantity | 1 |
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| Description | GaN Systems Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: 60 V Rds On - Drain-Source Resistance: 55 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 10 V Qg - Gate Charge: 6.5 nC Mounting Style: SMD/SMT Packaging: Tray Brand: GaN Systems Channel Mode: Enhancement Ciss - Input Capacitance: 200 pF Configuration: Single Technology: GaN |
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