MBR40035CT GENESIC SEMICONDUCTOR DIODE, RECTIF, 35V, 400A, TWIN TOWER

ProducentGENESIC SEMICONDUCTOR
Part Number

MBR40035CT (MBR40035CT)

Specifications

DIODE, RECTIF, 35V, 400A, TWIN TOWER

Unit Price37,53 EUR
Minimum Order Quantity1
Tariff No.85411000
Lead Time12 weeks
Weight and Dimension0.1 Kg
DescriptionDiode Case Style: Twin Tower Diode Configuration: Single Diode Type: Schottky Forward Current If(AV): 200A Forward Surge Current Ifsm Max: 3kA Forward Voltage VF Max: 650mV No. of Pins: 2 Operating Temperature Max: 175°C Packaging: Each Repetitive Reverse Voltage Vrrm Max: 35V Reverse Recovery Time trr Max: - SVHC: No SVHC (16-Jun-2014)
Datasheets
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