GB10SLT12-252 GENESIC SEMICONDUCTOR DIODE SCHOTTKY 1.2KV 10A TO252 Diode Silicon Carbide Schottky 1200V (1.2kV) 10A Surface Mount TO-252
| |
|
| Producent | GENESIC SEMICONDUCTOR | | Part Number | GB10SLT12-252 (GB10SLT12252) |
| Specifications | DIODE SCHOTTKY 1.2KV 10A TO252 Diode Silicon Carbide Schottky 1200V (1.2kV) 10A Surface Mount TO-252 |
| Unit Price | 8,33 EUR |
| Minimum Order Quantity | 2.5 |
| Tariff No. | |
| Lead Time | 126 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Diodes - Rectifiers - Single Manufacturer GeneSiC Semiconductor Series - Packaging Tube Part Status Active Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V (1.2kV) Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 2V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 250µA @ 1200V Capacitance @ Vr, F 520pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252 Operating Temperature - Junction -55°C ~ 175°C |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
