1N8028-GA GENESIC SEMICONDUCTOR DIODE SCHOTTKY 1.2KV 9.4A TO257 Diode Silicon Carbide Schottky 1200V (1.2kV) 9.4A (DC) Through Hole TO-257
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| Producent | GENESIC SEMICONDUCTOR | | Part Number | 1N8028-GA (1N8028GA) |
| Specifications | DIODE SCHOTTKY 1.2KV 9.4A TO257 Diode Silicon Carbide Schottky 1200V (1.2kV) 9.4A (DC) Through Hole TO-257 |
| Unit Price | 171,69 EUR |
| Minimum Order Quantity | 10 |
| Tariff No. | |
| Lead Time | 168 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Diodes - Rectifiers - Single Manufacturer GeneSiC Semiconductor Series - Packaging Tube Part Status Active Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V (1.2kV) Current - Average Rectified (Io) 9.4A (DC) Voltage - Forward (Vf) (Max) @ If 1.6V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 20µA @ 1200V Capacitance @ Vr, F 884pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-257-3 Supplier Device Package TO-257 Operating Temperature - Junction -55°C ~ 250°C |
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