1N8030-GA GENESIC SEMICONDUCTOR DIODE SCHOTTKY 650V 750MA TO257 Diode Silicon Carbide Schottky 650V 750mA Through Hole TO-257
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| Producent | GENESIC SEMICONDUCTOR | | Part Number | 1N8030-GA (1N8030GA) |
| Specifications | DIODE SCHOTTKY 650V 750MA TO257 Diode Silicon Carbide Schottky 650V 750mA Through Hole TO-257 |
| Unit Price | 180,63 EUR |
| Minimum Order Quantity | 10 |
| Tariff No. | |
| Lead Time | 168 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Diodes - Rectifiers - Single Manufacturer GeneSiC Semiconductor Series - Packaging Tube Part Status Active Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 750mA Voltage - Forward (Vf) (Max) @ If 1.39V @ 750mA Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 5µA @ 650V Capacitance @ Vr, F 76pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-257-3 Supplier Device Package TO-257 Operating Temperature - Junction -55°C ~ 250°C |
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