GB02SLT12-252 GENESIC SEMICONDUCTOR DIODE SIC SCHKY 1.2KV 2A TO252 Diode Silicon Carbide Schottky 1200V (1.2kV) 5A (DC) Surface Mount TO-252
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| Producent | GENESIC SEMICONDUCTOR | | Part Number | GB02SLT12-252 (GB02SLT12252) |
| Specifications | DIODE SIC SCHKY 1.2KV 2A TO252 Diode Silicon Carbide Schottky 1200V (1.2kV) 5A (DC) Surface Mount TO-252 |
| Unit Price | 1,91 EUR |
| Minimum Order Quantity | 2.5 |
| Tariff No. | |
| Lead Time | 126 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Diodes - Rectifiers - Single Manufacturer GeneSiC Semiconductor Series - Packaging Tape & Reel (TR) Part Status Active Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V (1.2kV) Current - Average Rectified (Io) 5A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 2A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 50µA @ 1200V Capacitance @ Vr, F 131pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252 Operating Temperature - Junction -55°C ~ 175°C |
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