GB01SLT12-252 GENESIC SEMICONDUCTOR DIODE SILICON 1.2KV 1A TO252 Diode Silicon Carbide Schottky 1200V (1.2kV) 1A Surface Mount TO-252
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| Producent | GENESIC SEMICONDUCTOR | | Part Number | GB01SLT12-252 (GB01SLT12252) |
| Specifications | DIODE SILICON 1.2KV 1A TO252 Diode Silicon Carbide Schottky 1200V (1.2kV) 1A Surface Mount TO-252 |
| Unit Price | 3,24 EUR |
| Minimum Order Quantity | 2.5 |
| Tariff No. | |
| Lead Time | 126 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Diodes - Rectifiers - Single Manufacturer GeneSiC Semiconductor Series - Packaging Bulk Part Status Active Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V (1.2kV) Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.8V @ 1A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 2µA @ 1200V Capacitance @ Vr, F 69pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252 Operating Temperature - Junction -55°C ~ 175°C |
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