GA03JT12-247 GENESIC SEMICONDUCTOR TRANS SJT 1200V 3A TO-247AB 1200V (1.2kV) 3A (Tc) (95°C) 15W (Tc) Through Hole TO-247AB
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| Producent | GENESIC SEMICONDUCTOR | | Part Number | GA03JT12-247 (GA03JT12247) |
| Specifications | TRANS SJT 1200V 3A TO-247AB 1200V (1.2kV) 3A (Tc) (95°C) 15W (Tc) Through Hole TO-247AB |
| Unit Price | 8,37 EUR |
| Minimum Order Quantity | 30 |
| Tariff No. | |
| Lead Time | 126 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer GeneSiC Semiconductor Series - Packaging Tube Part Status Active FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 3A (Tc) (95°C) Drive Voltage (Max Rds On, Min Rds On) - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Vgs (Max) 3.3V FET Feature - Power Dissipation (Max) 15W (Tc) Rds On (Max) @ Id, Vgs 460 mOhm @ 3A Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AB Package / Case TO-247-3 |
| Datasheets | |
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